ZTX603 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX603 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX603
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 1mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.96000
$0.96
10
$0.86800
$8.68
100
$0.68770
$68.77
500
$0.57728
$288.64
1,000
$0.46683
$0.46683
ZTX603 Product Details
ZTX603 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.150MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX603 Features
the DC current gain for this device is 2000 @ 1A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 1mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 150MHz
ZTX603 Applications
There are a lot of Diodes Incorporated ZTX603 applications of single BJT transistors.