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ZTX603

ZTX603

ZTX603

Diodes Incorporated

ZTX603 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX603 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX603
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1mA, 1A
Collector Emitter Breakdown Voltage80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage1V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7366 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.96000$0.96
10$0.86800$8.68
100$0.68770$68.77
500$0.57728$288.64

ZTX603 Product Details

ZTX603 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 1A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.150MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

ZTX603 Features


the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz

ZTX603 Applications


There are a lot of Diodes Incorporated ZTX603 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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