JANTX2N918UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N918UB Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, No Lead
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/301
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
200mW
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Reference Standard
MIL-19500/301H
JESD-30 Code
R-CDSO-N3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3mA 1V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
15V
Collector Base Voltage (VCBO)
30V
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max
3pF
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$32.43350
$3243.35
JANTX2N918UB Product Details
JANTX2N918UB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 1mA, 10mA.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
JANTX2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V the vce saturation(Max) is 400mV @ 1mA, 10mA
JANTX2N918UB Applications
There are a lot of Microsemi Corporation JANTX2N918UB applications of single BJT transistors.