JANTXV2N3501 Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.There is a transition frequency of 150MHz in the part.Collector current can be as low as 300mA volts at its maximum.

JANTXV2N3501 Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

JANTXV2N3501 Applications

There are a lot of Microsemi Corporation JANTXV2N3501 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting