FCB20N60-F085

new-10%

Manufacturer part number:FCB20N60-F085

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 20A D2PAK

Case Package:SOT-23

Datasheet:FCB20N60-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, SuperFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	FCB20N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	341W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	198m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.198Ohm
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	480 mJ
RoHS Status	ROHS3 Compliant