BCP5610TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.In the part, the transition frequency is 150MHz.An input voltage of 80V volts is the breakdown voltage.The maximum collector current is 1A volts.
BCP5610TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5610TA Applications
There are a lot of Diodes Incorporated BCP5610TA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
