FJP2160DTU Overview
In this device, the DC current gain is 20 @ 400mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 330mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.In this part, there is a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 2A volts.
FJP2160DTU Features
the DC current gain for this device is 20 @ 400mA 3V
the vce saturation(Max) is 750mV @ 330mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 25MHz
FJP2160DTU Applications
There are a lot of ON Semiconductor FJP2160DTU applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
