SBC856BLT1G Overview

DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 65V volts.A maximum collector current of 100mA volts is possible.

SBC856BLT1G Features

the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC856BLT1G Applications

There are a lot of ON Semiconductor SBC856BLT1G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface