2PB709ASW,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.As a result, the part has a transition frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

2PB709ASW,115 Features

the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 80MHz

2PB709ASW,115 Applications

There are a lot of Nexperia USA Inc. 2PB709ASW,115 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter