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FZT749TC

FZT749TC

FZT749TC

Diodes Incorporated

FZT749TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT749TC Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 160MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT749
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product160MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage25V
Transition Frequency 160MHz
Collector Emitter Saturation Voltage-400mV
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Continuous Collector Current -3A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19344 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.779629$12.779629
10$12.056254$120.56254
100$11.373824$1137.3824
500$10.730022$5365.011
1000$10.122663$10122.663

FZT749TC Product Details

FZT749TC Overview


In this device, the DC current gain is 100 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 300mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -3A in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3A).As a result, the part has a transition frequency of 160MHz.During maximum operation, collector current can be as low as 3A volts.

FZT749TC Features


the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 160MHz

FZT749TC Applications


There are a lot of Diodes Incorporated FZT749TC applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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