2SB1695TL Overview

This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -1.5A is necessary for high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.This device can take an input voltage of 30V volts before it breaks down.During maximum operation, collector current can be as low as 1.5A volts.

2SB1695TL Features

the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 280MHz

2SB1695TL Applications

There are a lot of ROHM Semiconductor 2SB1695TL applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting