MJD44H11RLG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In the part, the transition frequency is 85MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.In extreme cases, the collector current can be as low as 8A volts.
MJD44H11RLG Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz
MJD44H11RLG Applications
There are a lot of ON Semiconductor MJD44H11RLG applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
