2PD2150,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PD2150,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
2W
Base Part Number
2PD2150
Pin Count
3
Element Configuration
Single
Power - Max
2W
Gain Bandwidth Product
220MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
20V
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
hFE Min
180
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.853766
$0.853766
10
$0.805440
$8.0544
100
$0.759849
$75.9849
500
$0.716839
$358.4195
1000
$0.676263
$676.263
2PD2150,115 Product Details
2PD2150,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.Input voltage breakdown is available at 20V volts.Maximum collector currents can be below 3A volts.
2PD2150,115 Features
the DC current gain for this device is 180 @ 100mA 2V the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at 6V
2PD2150,115 Applications
There are a lot of Nexperia USA Inc. 2PD2150,115 applications of single BJT transistors.