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BC807K-25VL

  • BC807K-25VL
  • BC807K-25VL

BC807K-25VL

BC807K-25VL

Nexperia USA Inc.

BC807K-25VL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC807K-25VL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.033972 $0.033972
10 $0.032049 $0.32049
100 $0.030235 $3.0235
500 $0.028523 $14.2615
1000 $0.026909 $26.909
BC807K-25VL Product Details

BC807K-25VL Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC807K-25VL Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC807K-25VL Applications


There are a lot of Nexperia USA Inc. BC807K-25VL applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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