FJAF4210OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJAF4210OTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Weight
6.962g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-140V
Max Power Dissipation
80W
Current Rating
-10A
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 3A 4V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-200V
Emitter Base Voltage (VEBO)
-6V
hFE Min
50
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.183840
$7.18384
10
$6.777208
$67.77208
100
$6.393592
$639.3592
500
$6.031691
$3015.8455
1000
$5.690274
$5690.274
FJAF4210OTU Product Details
FJAF4210OTU Overview
This device has a DC current gain of 70 @ 3A 4V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 30MHz is present in the part.When collector current reaches its maximum, it can reach 10A volts.
FJAF4210OTU Features
the DC current gain for this device is 70 @ 3A 4V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 500mA, 5A the emitter base voltage is kept at -6V the current rating of this device is -10A a transition frequency of 30MHz
FJAF4210OTU Applications
There are a lot of ON Semiconductor FJAF4210OTU applications of single BJT transistors.