2SB1205T-E Overview

In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 60mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Collector current can be as low as 5A volts at its maximum.

2SB1205T-E Features

the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V

2SB1205T-E Applications

There are a lot of ON Semiconductor 2SB1205T-E applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver