BCW67CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCW67CE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
330mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BCW67CE6327HTSA1 Product Details
BCW67CE6327HTSA1 Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor comes in a supplier device package of SOT-23-3.The device has a 32V maximal voltage - Collector Emitter Breakdown.
BCW67CE6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of SOT-23-3
BCW67CE6327HTSA1 Applications
There are a lot of Rochester Electronics, LLC BCW67CE6327HTSA1 applications of single BJT transistors.