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BCW67CE6327HTSA1

BCW67CE6327HTSA1

BCW67CE6327HTSA1

Rochester Electronics, LLC

BCW67CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCW67CE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 330mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
42,000 $0.03444 $1.44648
BCW67CE6327HTSA1 Product Details

BCW67CE6327HTSA1 Overview


DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor comes in a supplier device package of SOT-23-3.The device has a 32V maximal voltage - Collector Emitter Breakdown.

BCW67CE6327HTSA1 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3

BCW67CE6327HTSA1 Applications


There are a lot of Rochester Electronics, LLC BCW67CE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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