2SA2126-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2126-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Base Part Number
2SA2126
Pin Count
3
Power - Max
800mW
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
520mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
390MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.646996
$0.646996
10
$0.610373
$6.10373
100
$0.575824
$57.5824
500
$0.543230
$271.615
1000
$0.512481
$512.481
2SA2126-H Product Details
2SA2126-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -6V, an efficient operation can be achieved.Maximum collector currents can be below 3A volts.
2SA2126-H Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 520mV @ 100mA, 2A the emitter base voltage is kept at -6V
2SA2126-H Applications
There are a lot of ON Semiconductor 2SA2126-H applications of single BJT transistors.