BC817-40QAZ Overview

This device has a DC current gain of 40 @ 500mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Breakdown input voltage is 45V volts.Maximum collector currents can be below 500mA volts.

BC817-40QAZ Features

the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BC817-40QAZ Applications

There are a lot of Nexperia USA Inc. BC817-40QAZ applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver