PBSS4032PT,215 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 1A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.A transition frequency of 160MHz is present in the part.Single BJT transistor can be broken down at a voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 2.4A volts at Single BJT transistors maximum.

PBSS4032PT,215 Features

the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz

PBSS4032PT,215 Applications

There are a lot of Nexperia USA Inc. PBSS4032PT,215 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver