KSC3503DSTU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.A collector emitter saturation voltage of 600mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 100mA volts.

KSC3503DSTU Features

the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz

KSC3503DSTU Applications

There are a lot of ON Semiconductor KSC3503DSTU applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface