BC847AQAZ Overview

DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor can be broken down at a voltage of 45V volts.Single BJT transistor comes in a supplier device package of DFN1010D-3.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 100mA volts is possible.

BC847AQAZ Features

the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the supplier device package of DFN1010D-3

BC847AQAZ Applications

There are a lot of Nexperia USA Inc. BC847AQAZ applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting