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BCX71HE6327HTSA1

  • BCX71HE6327HTSA1
  • BCX71HE6327HTSA1

BCX71HE6327HTSA1

BCX71HE6327HTSA1

Infineon Technologies

BCX71HE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX71HE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -45V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCX71
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 250MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.410686 $0.410686
10 $0.387440 $3.8744
100 $0.365509 $36.5509
500 $0.344820 $172.41
1000 $0.325302 $325.302
BCX71HE6327HTSA1 Product Details

BCX71HE6327HTSA1 Overview


In this device, the DC current gain is 180 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 250MHz is present in the part.The breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BCX71HE6327HTSA1 Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz

BCX71HE6327HTSA1 Applications


There are a lot of Infineon Technologies BCX71HE6327HTSA1 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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