NSS60601MZ4T1G Overview

This device has a DC current gain of 120 @ 1A 2V, which is the ratio between the collector current and the base current.When VCE saturation is 300mV @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Maximum collector currents can be below 6A volts.

NSS60601MZ4T1G Features

the DC current gain for this device is 120 @ 1A 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

NSS60601MZ4T1G Applications

There are a lot of ON Semiconductor NSS60601MZ4T1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter