2SA1943N(S1,E,S)

new-10%

Manufacturer part number:2SA1943N(S1,E,S)

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT PNP 230V 15A 3-Pin TO-3P(N)

Case Package:SOT-23

Datasheet:2SA1943N(S1,E,S) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Weight	6.961991g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2005
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150W
Polarity	PNP
Element Configuration	Single
Power - Max	150W
Gain Bandwidth Product	30MHz
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	15A
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A 5V
Current - Collector Cutoff (Max)	5μA ICBO
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Collector Emitter Breakdown Voltage	230V
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Collector Emitter Saturation Voltage	-1.1V
Frequency - Transition	30MHz
Collector Base Voltage (VCBO)	-230V
Emitter Base Voltage (VEBO)	-5V
hFE Min	35
Continuous Collector Current	-15A
RoHS Status	RoHS Compliant