Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBT3906 RFG

MMBT3906 RFG

MMBT3906 RFG

Taiwan Semiconductor Corporation

MMBT3906 RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

MMBT3906 RFG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.328810 $0.32881
10 $0.310198 $3.10198
100 $0.292640 $29.264
500 $0.276075 $138.0375
1000 $0.260449 $260.449
MMBT3906 RFG Product Details

MMBT3906 RFG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.The part has a transition frequency of 250MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

MMBT3906 RFG Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 250MHz

MMBT3906 RFG Applications


There are a lot of Taiwan Semiconductor Corporation MMBT3906 RFG applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News