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BCP53TF

BCP53TF

BCP53TF

Nexperia USA Inc.

BCP53TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP53TF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 4
Power - Max 1.8W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.366082 $0.366082
10 $0.345360 $3.4536
100 $0.325811 $32.5811
500 $0.307369 $153.6845
1000 $0.289971 $289.971
BCP53TF Product Details

BCP53TF Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCP53TF Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP53TF Applications


There are a lot of Nexperia USA Inc. BCP53TF applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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