2SCR573D3FRATL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR573D3FRATL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.60284
$1.20568
2SCR573D3FRATL Product Details
2SCR573D3FRATL Overview
DC current gain in this device equals 180 @ 100mA 3V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 50mA, 1A.Device displays Collector Emitter Breakdown (50V maximal voltage).
2SCR573D3FRATL Features
the DC current gain for this device is 180 @ 100mA 3V the vce saturation(Max) is 350mV @ 50mA, 1A
2SCR573D3FRATL Applications
There are a lot of ROHM Semiconductor 2SCR573D3FRATL applications of single BJT transistors.