PXT2222A,115 Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.In extreme cases, the collector current can be as low as 100mA volts.

PXT2222A,115 Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

PXT2222A,115 Applications

There are a lot of Nexperia USA Inc. PXT2222A,115 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver