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FMMT555TC

FMMT555TC

FMMT555TC

Diodes Incorporated

FMMT555TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT555TC Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
HTS Code 8541.21.00.95
Voltage - Rated DC -150V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT555
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 300mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -300mV
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.290302 $1.290302
10 $1.217266 $12.17266
100 $1.148365 $114.8365
500 $1.083363 $541.6815
1000 $1.022041 $1022.041
FMMT555TC Product Details

FMMT555TC Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 300mA 10V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.For high efficiency, the continuous collector voltage must be kept at -1A.The emitter base voltage can be kept at -5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.In the part, the transition frequency is 100MHz.The maximum collector current is 1A volts.

FMMT555TC Features


the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz

FMMT555TC Applications


There are a lot of Diodes Incorporated FMMT555TC applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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