FMMT555TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT555TC Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
HTS Code
8541.21.00.95
Voltage - Rated DC
-150V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT555
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 300mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
150V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-1A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.290302
$1.290302
10
$1.217266
$12.17266
100
$1.148365
$114.8365
500
$1.083363
$541.6815
1000
$1.022041
$1022.041
FMMT555TC Product Details
FMMT555TC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 300mA 10V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.For high efficiency, the continuous collector voltage must be kept at -1A.The emitter base voltage can be kept at -5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.In the part, the transition frequency is 100MHz.The maximum collector current is 1A volts.
FMMT555TC Features
the DC current gain for this device is 50 @ 300mA 10V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at -5V the current rating of this device is -1A a transition frequency of 100MHz
FMMT555TC Applications
There are a lot of Diodes Incorporated FMMT555TC applications of single BJT transistors.