BCP68-25,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP68-25,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
650mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
170MHz
Base Part Number
BCP68
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
650mW
Transistor Application
SWITCHING
Gain Bandwidth Product
170MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
40MHz
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.238356
$0.238356
10
$0.224864
$2.24864
100
$0.212136
$21.2136
500
$0.200128
$100.064
1000
$0.188800
$188.8
BCP68-25,135 Product Details
BCP68-25,135 Overview
In this device, the DC current gain is 160 @ 500mA 1V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BCP68-25,135 Features
the DC current gain for this device is 160 @ 500mA 1V the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 40MHz
BCP68-25,135 Applications
There are a lot of Nexperia USA Inc. BCP68-25,135 applications of single BJT transistors.