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BCX18LT1G

BCX18LT1G

BCX18LT1G

Rochester Electronics, LLC

BCX18LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCX18LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 300mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
RoHS StatusROHS3 Compliant
In-Stock:330595 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.02000$0.02
500$0.0198$9.9
1000$0.0196$19.6
1500$0.0194$29.1
2000$0.0192$38.4
2500$0.019$47.5

BCX18LT1G Product Details

BCX18LT1G Overview


In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product package SOT-23-3 (TO-236) comes from the supplier.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.

BCX18LT1G Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the supplier device package of SOT-23-3 (TO-236)

BCX18LT1G Applications


There are a lot of Rochester Electronics, LLC BCX18LT1G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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