MJE802G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 1MHz.Maximum collector currents can be below 4A volts.

MJE802G Features

the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 1MHz

MJE802G Applications

There are a lot of ON Semiconductor MJE802G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter