2N2369A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 4.5V can achieve high levels of efficiency.A transition frequency of 500MHz is present in the part.During maximum operation, collector current can be as low as 400nA volts.
2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
2N2369A Applications
There are a lot of Microsemi Corporation 2N2369A applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
