2N2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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2N2369A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
400nA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic
450mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
500MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4.5V
VCEsat-Max
0.45 V
Collector-Base Capacitance-Max
4pF
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.58000
$2.58
10
$2.32800
$23.28
25
$2.07920
$51.98
100
$1.87110
$187.11
250
$1.66320
$415.8
500
$1.45530
$727.65
1,000
$1.20582
$1.20582
2,500
$1.12266
$2.24532
5,000
$1.10880
$5.544
2N2369A Product Details
2N2369A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 4.5V can achieve high levels of efficiency.A transition frequency of 500MHz is present in the part.During maximum operation, collector current can be as low as 400nA volts.
2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V the vce saturation(Max) is 450mV @ 10mA, 100mA the emitter base voltage is kept at 4.5V a transition frequency of 500MHz
2N2369A Applications
There are a lot of Microsemi Corporation 2N2369A applications of single BJT transistors.