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2N2369A

  • 2N2369A
  • 2N2369A

2N2369A

2N2369A

Microsemi Corporation

2N2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N2369A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 360mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 360mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 500MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4.5V
VCEsat-Max 0.45 V
Collector-Base Capacitance-Max 4pF
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.58000 $2.58
10 $2.32800 $23.28
25 $2.07920 $51.98
100 $1.87110 $187.11
250 $1.66320 $415.8
500 $1.45530 $727.65
1,000 $1.20582 $1.20582
2,500 $1.12266 $2.24532
5,000 $1.10880 $5.544
2N2369A Product Details

2N2369A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 4.5V can achieve high levels of efficiency.A transition frequency of 500MHz is present in the part.During maximum operation, collector current can be as low as 400nA volts.

2N2369A Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz

2N2369A Applications


There are a lot of Microsemi Corporation 2N2369A applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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