BCP69-25,135 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

BCP69-25,135 Features

the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 40MHz

BCP69-25,135 Applications

There are a lot of Nexperia USA Inc. BCP69-25,135 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface