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BCW68GR

  • BCW68GR
  • BCW68GR

BCW68GR

BCW68GR

Nexperia USA Inc.

BCW68GR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW68GR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 80MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.049320 $0.04932
500 $0.036265 $18.1325
1000 $0.030221 $30.221
2000 $0.027725 $55.45
5000 $0.025912 $129.56
10000 $0.024104 $241.04
15000 $0.023311 $349.665
50000 $0.022921 $1146.05
BCW68GR Product Details

BCW68GR Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BCW68GR Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW68GR Applications


There are a lot of Nexperia USA Inc. BCW68GR applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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