2PB709ASL,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PB709ASL,235 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PB709A
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 2mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
80MHz
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.03000
$0.03
500
$0.0297
$14.85
1000
$0.0294
$29.4
1500
$0.0291
$43.65
2000
$0.0288
$57.6
2500
$0.0285
$71.25
2PB709ASL,235 Product Details
2PB709ASL,235 Overview
This device has a DC current gain of 290 @ 2mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.There is a transition frequency of 80MHz in the part.Maximum collector currents can be below 100mA volts.
2PB709ASL,235 Features
the DC current gain for this device is 290 @ 2mA 10V the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 80MHz
2PB709ASL,235 Applications
There are a lot of Nexperia USA Inc. 2PB709ASL,235 applications of single BJT transistors.