BCX52-16,135 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 145MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX52-16,135 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz

BCX52-16,135 Applications

There are a lot of Nexperia USA Inc. BCX52-16,135 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting