BCX55-16,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCX55-16,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Supplier Device Package
SOT-89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.25W
Frequency
180MHz
Base Part Number
BCX55
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.35W
Power - Max
1.25W
Gain Bandwidth Product
180MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Max Breakdown Voltage
60V
Frequency - Transition
180MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.48000
$0.48
500
$0.4752
$237.6
1000
$0.4704
$470.4
1500
$0.4656
$698.4
2000
$0.4608
$921.6
2500
$0.456
$1140
BCX55-16,135 Product Details
BCX55-16,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.There is a breakdown input voltage of 60V volts that it can take.Supplier package SOT-89 contains the product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Collector current can be as low as 1A volts at its maximum.
BCX55-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the supplier device package of SOT-89
BCX55-16,135 Applications
There are a lot of Nexperia USA Inc. BCX55-16,135 applications of single BJT transistors.