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2SA1576UBTLR

2SA1576UBTLR

2SA1576UBTLR

ROHM Semiconductor

2SA1576UBTLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1576UBTLR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SA1576
Element Configuration Single
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -150mA
Height 1mm
Length 2.1mm
Width 1.35mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.856734 $0.856734
10 $0.808240 $8.0824
100 $0.762491 $76.2491
500 $0.719331 $359.6655
1000 $0.678614 $678.614
2SA1576UBTLR Product Details

2SA1576UBTLR Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -150mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 150mA volts at its maximum.

2SA1576UBTLR Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V

2SA1576UBTLR Applications


There are a lot of ROHM Semiconductor 2SA1576UBTLR applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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