2SA1576UBTLR Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -150mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 150mA volts at its maximum.
2SA1576UBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1576UBTLR Applications
There are a lot of ROHM Semiconductor 2SA1576UBTLR applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
