NSS20500UW3T2G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.As it features a collector emitter saturation voltage of -270mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 260mV @ 400mA, 4A.Emitter base voltages of 7V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.An input voltage of 100V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 5A volts.

NSS20500UW3T2G Features

the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS20500UW3T2G Applications

There are a lot of ON Semiconductor NSS20500UW3T2G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter