NSS20500UW3T2G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NSS20500UW3T2G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
3-WDFN Exposed Pad
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
875mW
Terminal Position
DUAL
Frequency
100MHz
Base Part Number
NSS20500
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Power - Max
875mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-270mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
7V
hFE Min
250
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.191360
$1.19136
10
$1.123925
$11.23925
100
$1.060306
$106.0306
500
$1.000289
$500.1445
1000
$0.943669
$943.669
NSS20500UW3T2G Product Details
NSS20500UW3T2G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.As it features a collector emitter saturation voltage of -270mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 260mV @ 400mA, 4A.Emitter base voltages of 7V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.An input voltage of 100V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 5A volts.
NSS20500UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V a collector emitter saturation voltage of -270mV the vce saturation(Max) is 260mV @ 400mA, 4A the emitter base voltage is kept at 7V a transition frequency of 100MHz
NSS20500UW3T2G Applications
There are a lot of ON Semiconductor NSS20500UW3T2G applications of single BJT transistors.