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PBSS304PD,115

PBSS304PD,115

PBSS304PD,115

Nexperia USA Inc.

PBSS304PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS304PD,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBSS304P
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 155 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 540mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 110MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 90ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.693600 $7.6936
10 $7.258113 $72.58113
100 $6.847277 $684.7277
500 $6.459695 $3229.8475
1000 $6.094052 $6094.052
PBSS304PD,115 Product Details

PBSS304PD,115 Overview


In this device, the DC current gain is 155 @ 500mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 540mV @ 500mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 110MHz.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 3A volts is possible.

PBSS304PD,115 Features


the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz

PBSS304PD,115 Applications


There are a lot of Nexperia USA Inc. PBSS304PD,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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