PBSS304PD,115 Overview

In this device, the DC current gain is 155 @ 500mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 540mV @ 500mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In the part, the transition frequency is 110MHz.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 3A volts is possible.

PBSS304PD,115 Features

the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz

PBSS304PD,115 Applications

There are a lot of Nexperia USA Inc. PBSS304PD,115 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting