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MMBTA06LT1G

  • MMBTA06LT1G
  • MMBTA06LT1G

MMBTA06LT1G

MMBTA06LT1G

ON Semiconductor

MMBTA06LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA06LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBTA06
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04140 $0.1242
6,000 $0.03747 $0.22482
15,000 $0.03275 $0.49125
30,000 $0.02960 $0.888
75,000 $0.02646 $1.9845
150,000 $0.02221 $3.3315
MMBTA06LT1G Product Details

MMBTA06LT1G Description

 

MMBTA06LT1G NPN transistor is designed for linear and switching applications. Comparatively the Field-effect transistors, MMBTA06LT1G transistors have slower switching speeds, their input impedance is very low and the power consumption is significant. On Semiconductor MMBTA06LT1G is widely used in television, broadcasting communications radar, computers, electronic devices for automatic control as well as household appliances as well as many other fields.

 

 

MMBTA06LT1G Features

 

AEC?Q101 Qualified and PPAP Capable

Miniature SOT-23 Surface Mount Package Saves Board Space

Pb?Free

Control Change Requirements

Halogen Free/BFR Free

RoHS Compliant

 

MMBTA06LT1G Applications

 

Television

Broadcasting communications

Radar

Computers

Household appliances


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