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BCX56-16,135

  • BCX56-16,135
  • BCX56-16,135

BCX56-16,135

BCX56-16,135

Nexperia USA Inc.

BCX56-16,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCX56-16,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.25W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BCX56
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Ambient Temperature Range High 150°C
Height 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.12054 $0.48216
8,000 $0.11466 $0.91728
12,000 $0.10584 $1.27008
28,000 $0.09996 $2.79888
100,000 $0.09702 $9.702
BCX56-16,135 Product Details

BCX56-16,135 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Breakdown input voltage is 80V volts.The maximum collector current is 1A volts.

BCX56-16,135 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BCX56-16,135 Applications


There are a lot of Nexperia USA Inc. BCX56-16,135 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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