BC817SUE6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 170MHz.The breakdown input voltage is 45V volts.The maximum collector current is 500mA volts.
BC817SUE6327HTSA1 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817SUE6327HTSA1 Applications
There are a lot of Infineon Technologies BC817SUE6327HTSA1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
