2SD1624T-TD-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 350mV allows maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In this part, there is a transition frequency of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SD1624T-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1624T-TD-E Applications
There are a lot of ON Semiconductor 2SD1624T-TD-E applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
