BCP5416TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 150MHz is present in the part.The breakdown input voltage is 45V volts.Maximum collector currents can be below 1A volts.
BCP5416TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5416TA Applications
There are a lot of Diodes Incorporated BCP5416TA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
