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DCP53-16-13

DCP53-16-13

DCP53-16-13

Diodes Incorporated

DCP53-16-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP53-16-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP53
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -1A
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:18568 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.393760$5.39376
10$5.088453$50.88453
100$4.800427$480.0427
500$4.528705$2264.3525
1000$4.272363$4272.363

DCP53-16-13 Product Details

DCP53-16-13 Overview


In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.There is a transition frequency of 200MHz in the part.This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

DCP53-16-13 Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP53-16-13 Applications


There are a lot of Diodes Incorporated DCP53-16-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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