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BF621,115

BF621,115

BF621,115

Nexperia USA Inc.

BF621,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BF621,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.1W
Terminal Form FLAT
Frequency 60MHz
Base Part Number BF621
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.1W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 60MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.8 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.425040 $0.42504
10 $0.400981 $4.00981
100 $0.378284 $37.8284
500 $0.356872 $178.436
1000 $0.336671 $336.671
BF621,115 Product Details

BF621,115 Overview


In this device, the DC current gain is 50 @ 25mA 20V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 5mA, 30mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 50mA volts.

BF621,115 Features


the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 800mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

BF621,115 Applications


There are a lot of Nexperia USA Inc. BF621,115 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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