BF621,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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BF621,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.1W
Terminal Form
FLAT
Frequency
60MHz
Base Part Number
BF621
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.1W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
60MHz
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.8 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.425040
$0.42504
10
$0.400981
$4.00981
100
$0.378284
$37.8284
500
$0.356872
$178.436
1000
$0.336671
$336.671
BF621,115 Product Details
BF621,115 Overview
In this device, the DC current gain is 50 @ 25mA 20V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 5mA, 30mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 60MHz.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 50mA volts.
BF621,115 Features
the DC current gain for this device is 50 @ 25mA 20V the vce saturation(Max) is 800mV @ 5mA, 30mA the emitter base voltage is kept at 5V a transition frequency of 60MHz
BF621,115 Applications
There are a lot of Nexperia USA Inc. BF621,115 applications of single BJT transistors.