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BF820W,115

  • BF820W,115
  • BF820W,115

BF820W,115

BF820W,115

Nexperia USA Inc.

BF820W,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BF820W,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 60MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF820
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Gain Bandwidth Product 60MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 60MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.6 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.06670 $0.2001
6,000 $0.05800 $0.348
15,000 $0.04930 $0.7395
30,000 $0.04640 $1.392
75,000 $0.04350 $3.2625
150,000 $0.04060 $6.09
BF820W,115 Product Details

BF820W,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 25mA 20V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 60MHz.A breakdown input voltage of 300V volts can be used.When collector current reaches its maximum, it can reach 50mA volts.

BF820W,115 Features


the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

BF820W,115 Applications


There are a lot of Nexperia USA Inc. BF820W,115 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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