BSH103,235

new-10%

Manufacturer part number:BSH103,235

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 30V 0.85A SOT23

Case Package:SOT-23

Datasheet:BSH103,235 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.21.00.75
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Power Dissipation-Max	540mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	2.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	400mV @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds	83pF @ 24V
Current - Continuous Drain (Id) @ 25°C	850mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Rise Time	3.5ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V
Vgs (Max)	±8V
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	850mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	30V
Drain Current-Max (Abs) (ID)	0.85A
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant